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Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs

Date

2020
Journal article
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dc.contributor.authorZhou, L.
dc.contributor.authorZhang, Q.
dc.contributor.authorYang, H.
dc.contributor.authorJi, Z.
dc.contributor.authorZhang, Z.
dc.contributor.authorLiu, Q.
dc.contributor.authorXu, H.
dc.contributor.authorTang, B.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMa, X.
dc.contributor.authorWang, X.
dc.contributor.authorLi, Y.
dc.contributor.authorYin, H.
dc.contributor.authorLuo, J.
dc.contributor.authorZhao, C.
dc.contributor.authorWang, W.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-29T09:05:56Z
dc.date.available2021-10-29T09:05:56Z
dc.date.issued2020
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36416
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9086034
dc.source.beginpage965
dc.source.endpage968
dc.source.issue7
dc.source.journalIEEE Electron Device Letters
dc.source.volume41
dc.title

Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs

dc.typeJournal article
dspace.entity.typePublication
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