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NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics

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dc.contributor.authorHenson, Kirklen
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDemand, Marc
dc.contributor.authorGoodwin, Michael
dc.contributor.authorBrus, Stephan
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVan Ammel, Annemie
dc.contributor.authorDegroote, Bart
dc.contributor.authorErcken, Monique
dc.contributor.authorBaerts, Christina
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorDixit, Abhisek
dc.contributor.authorBeckx, Stephan
dc.contributor.authorSchram, Tom
dc.contributor.authorDeweerd, Wim
dc.contributor.authorBoullart, Werner
dc.contributor.authorSchaekers, Marc
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorYim, Yong Sik
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorVan Ammel, Annemie
dc.contributor.imecauthorErcken, Monique
dc.contributor.imecauthorBaerts, Christina
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T02:02:37Z
dc.date.available2021-10-16T02:02:37Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10579
dc.source.beginpage136
dc.source.conferenceProceedings IEEE VLSI-TSA International Symposium on VLSI Technology
dc.source.conferencedate25/04/2005
dc.source.conferencelocationHsinchu Taiwan
dc.source.endpage137
dc.title

NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics

dc.typeProceedings paper
dspace.entity.typePublication
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