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Demonstration of fully Ni-silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applications
Publication:
Demonstration of fully Ni-silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applications
Date
2004-06
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kottantharayil, Anil
;
Veloso, Anabela
;
Kubicek, Stefan
;
Schram, Tom
;
Augendre, Emmanuel
;
de Marneffe, Jean-Francois
;
Devriendt, Katia
;
Lauwers, Anne
;
Brus, Stephan
;
Henson, Kirklen
;
Biesemans, Serge
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1887
since deposited on 2021-10-15
Acq. date: 2025-10-22
Citations
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Views
1887
since deposited on 2021-10-15
Acq. date: 2025-10-22
Citations