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High-energy boron-implantation and proton-irradiation effects in diodes with shallow trench isolation

Date

2000
Proceedings Paper
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dc.contributor.authorPoyai, Amporn
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorKobayashi, K.
dc.contributor.authorOhyama, Hidenori
dc.contributor.authorTakizawa, H.
dc.contributor.authorKokkoris, M.
dc.contributor.authorKossionides, E.
dc.contributor.authorFanourakis, G.
dc.contributor.authorMohammadzadeh, A.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T13:36:02Z
dc.date.available2021-10-14T13:36:02Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4673
dc.source.beginpage193
dc.source.conferenceProceedings 2nd ENDEASD Workshop
dc.source.conferencedate27/06/2000
dc.source.conferencelocationKista-Stockholm Sweden
dc.source.endpage203
dc.title

High-energy boron-implantation and proton-irradiation effects in diodes with shallow trench isolation

dc.typeProceedings paper
dspace.entity.typePublication
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