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Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 layer

Date

2005-09
Journal article
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dc.contributor.authorDerluyn, Joff
dc.contributor.authorBoeykens, Steven
dc.contributor.authorCheng, Kai
dc.contributor.authorVandersmissen, Raf
dc.contributor.authorDas, Johan
dc.contributor.authorRuythooren, Wouter
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorRuythooren, Wouter
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-16T01:20:18Z
dc.date.available2021-10-16T01:20:18Z
dc.date.issued2005-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10376
dc.source.beginpage054501-1
dc.source.endpage054501-5
dc.source.issue5
dc.source.journalJournal of Applied Physics
dc.source.volume98
dc.title

Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 layer

dc.typeJournal article
dspace.entity.typePublication
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