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NBTI in replacement metal gate SiGe core finFETs: impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneal
Publication:
NBTI in replacement metal gate SiGe core finFETs: impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneal
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Date
2016
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Franco, Jacopo
;
Kaczer, Ben
;
Vaisman Chasin, Adrian
;
Mertens, Hans
;
Ragnarsson, Lars-Ake
;
Ritzenthaler, Romain
;
Mukhopadhyay, Subhadeep
;
Arimura, Hiroaki
;
Roussel, Philippe
;
Bury, Erik
;
Horiguchi, Naoto
;
Linten, Dimitri
;
Groeseneken, Guido
;
Thean, Aaron
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Downloads
1
since deposited on 2021-10-23
Acq. date: 2025-12-15
Views
1897
since deposited on 2021-10-23
1
last month
1
last week
Acq. date: 2025-12-15
Citations