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Measurement, modelling and simulation of defects in as-grown Czrochalski silicon

Date

1997
Journal article
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dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSenkader, S.
dc.contributor.authorKissinger, G.
dc.contributor.authorHiggs, V.
dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorGraef, D.
dc.contributor.authorLambert, U.
dc.contributor.authorWagner, Patrick
dc.date.accessioned2021-09-30T09:58:48Z
dc.date.available2021-09-30T09:58:48Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2272
dc.source.beginpage353
dc.source.endpage62
dc.source.issue3_4
dc.source.journalJournal of Crystal Growth
dc.source.volume180
dc.title

Measurement, modelling and simulation of defects in as-grown Czrochalski silicon

dc.typeJournal article
dspace.entity.typePublication
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