Publication:
Total Ionizing Dose Effects Sensitivity of Unsalicided Polysilicon Resistors
| dc.contributor.author | Gorbunov, Maxim | |
| dc.contributor.author | Boufouss, El Hafed | |
| dc.contributor.author | Li, Zheyi | |
| dc.contributor.author | Vignon, Bastien | |
| dc.contributor.author | van de Burgwal, Marcel | |
| dc.contributor.author | Berti, Laurent | |
| dc.contributor.author | Thys, Geert | |
| dc.contributor.imecauthor | Boufouss, El Hafed | |
| dc.contributor.imecauthor | Li, Zheyi | |
| dc.contributor.imecauthor | Vignon, Bastien | |
| dc.contributor.imecauthor | Berti, Laurent | |
| dc.contributor.imecauthor | Thys, Geert | |
| dc.contributor.imecauthor | Gorbunov, Maxim | |
| dc.contributor.imecauthor | van de Burgwal, Marcel | |
| dc.contributor.orcidimec | Boufouss, El Hafed::0000-0002-0208-2615 | |
| dc.contributor.orcidimec | Li, Zheyi::0000-0002-1740-1711 | |
| dc.contributor.orcidimec | Vignon, Bastien::0000-0001-9220-2539 | |
| dc.contributor.orcidimec | Berti, Laurent::0000-0002-0388-6498 | |
| dc.contributor.orcidimec | Thys, Geert::0000-0002-5320-7844 | |
| dc.contributor.orcidimec | Gorbunov, Maxim::0000-0002-4017-7033 | |
| dc.contributor.orcidimec | van de Burgwal, Marcel::0000-0003-0912-7131 | |
| dc.date.accessioned | 2025-01-23T15:28:06Z | |
| dc.date.available | 2024-09-21T17:57:49Z | |
| dc.date.available | 2025-01-23T15:28:06Z | |
| dc.date.issued | 2024 | |
| dc.description.wosFundingText | This work was supported by the European Space Agency (ESA) through the Project "DARE65-Implementation, Evaluation and Release of a Radiation Hardened Mixed-Signal Cell Library in a 65 nmCMOS Technology" under Contract 4000117214/16/NL/LF. | |
| dc.identifier.doi | 10.1109/TNS.2024.3352491 | |
| dc.identifier.issn | 0018-9499 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/44558 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 1872 | |
| dc.source.endpage | 1878 | |
| dc.source.issue | 8 | |
| dc.source.journal | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | |
| dc.source.numberofpages | 7 | |
| dc.source.volume | 71 | |
| dc.subject.keywords | TEMPERATURE | |
| dc.subject.keywords | DEPENDENCE | |
| dc.title | Total Ionizing Dose Effects Sensitivity of Unsalicided Polysilicon Resistors | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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