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First Demonstration of Field Free Switching Perpendicular SOT-MRAM 4kb Array Using Z-Spin

 
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dc.contributor.authorGama Monteiro Junior, Maxwel
dc.contributor.authorKumar, A.
dc.contributor.authorKateel, Vaishnavi
dc.contributor.authorVermeulen, B.
dc.contributor.authorCoester, B.
dc.contributor.authorChatterjee, Jyotirmoy
dc.contributor.authorTalmelli, Giacomo
dc.contributor.authorPalomino, A.
dc.contributor.authorUrrestarazu-Larranaga, J.
dc.contributor.authorVan Beek, Simon
dc.contributor.authorWostyn, Kurt
dc.contributor.authorRao, Siddharth
dc.contributor.authorNguyen, Van Dai
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2026-07-16T09:35:53Z
dc.date.available2026-07-16T09:35:53Z
dc.date.createdwos2026
dc.date.issued2025
dc.description.abstractIn a fully integrated 300 mm platform for perpendicular Spin-Orbit Torque Magnetoresistive RAM (SOT-MRAM), we demonstrate field-free functionality in a 4kb characterization array. Our results show that a stack design of a ferromagnet (FM) / Ta bilayer track enables Z-Spin based switching on SOT-MRAM devices in the <10ns regime. Furthermore, our devices show tunneling magnetoresistance (TMR) > 90% and retention >10 years, which is comparable to a standard field assisted SOT device. The devices integrated in 4kb sub-bank array configurations show excellent distributions and low variability between dies, paving the way for advanced memory applications of SOT-MRAM.
dc.description.wosFundingTextThis work has been enabled in part by the NanoIC pilot line. The acquisition and operation are jointly funded by the Chips Joint Undertaking, through the European Union's Digital Europe (101183266) and Horizon Europe programs (101183277), as well as by the participating states Belgium (Flanders), France, Germany, Finland, Ireland and Romania. B.B.V. acknowledges FWO-Vlaanderen for a SB Research PhD fellowship (No. 1S72225N). This work is also supported by Imec's industrial affiliation program for MRAM devices.
dc.identifier.doi10.1109/iedm50572.2025.11353687
dc.identifier.isbn979-8-3315-6786-6
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59872
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedate2025-12-06
dc.source.conferencelocationSan Francisco
dc.source.journal2025 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
dc.source.numberofpages4
dc.subject.keywordsORBIT TORQUE
dc.title

First Demonstration of Field Free Switching Perpendicular SOT-MRAM 4kb Array Using Z-Spin

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2026-07-14
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-07-14
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