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Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMT's

Date

1998
Journal article
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dc.contributor.authorvan Meer, Hans
dc.contributor.authorValenza, M.
dc.contributor.authorvan der Zanden, Koen
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorKaufmann, L.
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-01T09:21:50Z
dc.date.available2021-10-01T09:21:50Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3061
dc.source.beginpage370
dc.source.endpage372
dc.source.issue10
dc.source.journalIEEE Electron Device Letters
dc.source.volume19
dc.title

Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMT's

dc.typeJournal article
dspace.entity.typePublication
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