Publication:

Chalcogenide Selector-Only Memory

 
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cris.virtual.orcid0000-0002-4044-9975
cris.virtual.orcid0000-0001-7862-5973
cris.virtual.orcid0000-0002-5884-1043
cris.virtualsource.department9cdfd845-a587-4e78-bf30-cdddaec01290
cris.virtualsource.department9e3a2179-b187-48c3-adbd-8d5003d288fd
cris.virtualsource.departmentdf2ee43a-baee-413b-9bc5-bf71d763133e
cris.virtualsource.orcid9cdfd845-a587-4e78-bf30-cdddaec01290
cris.virtualsource.orcid9e3a2179-b187-48c3-adbd-8d5003d288fd
cris.virtualsource.orciddf2ee43a-baee-413b-9bc5-bf71d763133e
dc.contributor.authorZhao, Jiayi
dc.contributor.authorSun, Yuting
dc.contributor.authorRen, Kun
dc.contributor.authorRavsher, Taras
dc.contributor.authorGarbin, Daniele
dc.contributor.authorClima, Sergiu
dc.contributor.authorZhu, Min
dc.contributor.orcidext0009-0001-6534-6542
dc.date.accessioned2026-09-17T13:05:16Z
dc.date.available2026-09-17T13:05:16Z
dc.date.createdwos2026
dc.date.issued2026
dc.description.abstractThe explosive growth of data-centric artificial intelligence has exposed fundamental limitations of the conventional memory hierarchy, intensifying the demand for storage class memory (SCM) technologies that simultaneously offer low latency, high endurance, and scalable density. Selector-only memory (SOM), also referred to as self-selecting memory, has recently emerged as a disruptive chalcogenide-based paradigm by integrating selector and memory functionalities within a single amorphous material, thereby simplifying the device architecture of conventional one-selector-one-memory (1S1R) designs. In this Review, we present a comprehensive overview of chalcogenide-based SOM, tracing its evolution from ovonic threshold switch (OTS) to SOM chips. We systematically examine the materials landscape of SOM, spanning tellurium-, selenium-, and sulfur-based systems, and critically compare their trade-offs in switching speed, power consumption, memory window, voltage drift, endurance, and thermal stability. Beyond single-layer compositions, recent advances in multi-chalcogenide stacking and heterostructure engineering are highlighted as effective strategies to decouple switching dynamics from structural relaxation, enabling large memory window and ultra-low drift simultaneously. We further discuss the competing physical mechanisms proposed for polarity-dependent threshold modulation, including atomic segregation mechanism, graded band-gap model, anisotropic structural unit model and interfacial band-bending model, and assess their implications for device reliability and scaling. Finally, we outline key challenges and opportunities for SOM in three-dimensional vertical integration, multilevel operation, and emerging system architectures such as compute express link (CXL)-based memory expansion and neuromorphic computing. By bridging materials science, device physics, and system-level considerations, this Review positions SOM as a promising platform for next-generation memory-centric computing.
dc.description.wosFundingTextM. Zhu discloses support for the research of this work from the National Outstanding Youth Program (grant number 62322411) and General Program of National Natural Science Foundation of China (grant number 62574127) .
dc.identifier.doi10.1016/j.mattod.2026.103429
dc.identifier.eissn1873-4103
dc.identifier.issn1369-7021
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/60409
dc.language.isoeng
dc.provenance.editstepusermeghan.oneill@imec.be
dc.publisherELSEVIER SCI LTD
dc.source.beginpage103429
dc.source.journalMATERIALS TODAY
dc.source.numberofpages23
dc.source.volume98
dc.subject.keywordsPHASE-CHANGE MATERIALS
dc.subject.keywordsELECTRICAL INSTABILITIES
dc.subject.keywordsSWITCH
dc.subject.keywordsOPPORTUNITIES
dc.subject.keywordsCONSUMPTION
dc.subject.keywordsELECTRONICS
dc.subject.keywordsASSOCIATION
dc.subject.keywordsPERFORMANCE
dc.subject.keywordsOPERATION
dc.subject.keywordsDEVICES
dc.title

Chalcogenide Selector-Only Memory

dc.typeJournal article
dspace.entity.typePublication
imec.internal.crawledAt2026-07-14
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-09-07
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