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The dependence of sense margin and retention time on front and back gate bias in UTBOX FBRAM

Date

2012
Proceedings Paper
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dc.contributor.authorAlmeida, Luciano M.
dc.contributor.authorSasaki, Katia R.A.
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, Joao A.
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-20T10:01:28Z
dc.date.available2021-10-20T10:01:28Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20280
dc.source.beginpage23
dc.source.conference8th European Workshop on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI
dc.source.conferencedate24/01/2012
dc.source.conferencelocationMontpellier France
dc.source.endpage24
dc.title

The dependence of sense margin and retention time on front and back gate bias in UTBOX FBRAM

dc.typeProceedings paper
dspace.entity.typePublication
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