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GaN based high electron mobility transistor technology and physics

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dc.contributor.authorWang, Wenfei
dc.contributor.imecauthorWang, Wenfei
dc.contributor.thesisadvisorNauwelaers, Bart
dc.contributor.thesisadvisorSchreurs, Dominique
dc.date.accessioned2021-10-16T21:37:53Z
dc.date.available2021-10-16T21:37:53Z
dc.date.embargo9999-12-31
dc.date.issued2007-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13210
dc.title

GaN based high electron mobility transistor technology and physics

dc.typePHD thesis
dspace.entity.typePublication
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