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Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology

Date

2009
Meeting abstract
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dc.contributor.authorNguyen, Duy
dc.contributor.authorRosseel, Erik
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorLoo, Roger
dc.contributor.authorGoossens, Jozefien
dc.contributor.authorMoussa, Alain
dc.contributor.authorClarysse, Trudo
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-18T01:09:05Z
dc.date.available2021-10-18T01:09:05Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15922
dc.source.conferenceInternational Semiconductor Device Research Symposium - ISDRS
dc.source.conferencedate9/12/2009
dc.source.conferencelocationCollege Park, MD USA
dc.title

Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology

dc.typeMeeting abstract
dspace.entity.typePublication
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