Publication:

Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors

Date

2016
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorAgarwal Kumar, Tarun
dc.contributor.authorSoree, Bart
dc.contributor.authorRadu, Iuliana
dc.contributor.authorRaghavan, Praveen
dc.contributor.authorFiori, Gianluca
dc.contributor.authorIannaccone, Giuseppe
dc.contributor.authorThean, Aaron
dc.contributor.authorHeyns, Marc
dc.contributor.authorDehaene, Wim
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDehaene, Wim
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.date.accessioned2021-10-23T10:04:16Z
dc.date.available2021-10-23T10:04:16Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26270
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/108/2/10.1063/1.4939933
dc.source.beginpage23506
dc.source.issue2
dc.source.journalApplied Physics Letters
dc.source.volume108
dc.title

Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
33363.pdf
Size:
1.09 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles