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Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

Date

2002
Meeting abstract
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dc.contributor.authorJacobs, Koen
dc.contributor.authorLeys, Maarten
dc.contributor.authorMoerman, Ingrid
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.accessioned2021-10-14T21:53:24Z
dc.date.available2021-10-14T21:53:24Z
dc.date.embargo9999-12-31
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6427
dc.source.beginpage157
dc.source.conference11th International Conference on Metalorganic Vapor Phase Epitaxy - MOVPE
dc.source.conferencedate3/06/2002
dc.source.conferencelocationBerlin Germany
dc.title

Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

dc.typeMeeting abstract
dspace.entity.typePublication
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