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Analytical calculation of subthreshold slope increase in short-channel MOSFET's by taking drift component into account

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dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-09-29T13:04:15Z
dc.date.available2021-09-29T13:04:15Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/524
dc.source.beginpage917
dc.source.endpage920
dc.source.issue2B
dc.source.journalJapanese Journal of Applied Physics. Part 1
dc.source.volume34
dc.title

Analytical calculation of subthreshold slope increase in short-channel MOSFET's by taking drift component into account

dc.typeJournal article
dspace.entity.typePublication
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