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Fabrication of high qualtiy Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

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1961 since deposited on 2021-10-19
1last month
Acq. date: 2026-01-26

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1961 since deposited on 2021-10-19
1last month
Acq. date: 2026-01-26

Citations