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Fabrication of high qualtiy Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

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1963 since deposited on 2021-10-19
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Acq. date: 2026-02-28

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1963 since deposited on 2021-10-19
2last month
1last week
Acq. date: 2026-02-28

Citations