Publication:

Polarity-Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition

 
dc.contributor.authorRavsher, Taras
dc.contributor.authorGarbin, Daniele
dc.contributor.authorFantini, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorClima, Sergiu
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorKundu, Shreya
dc.contributor.authorHody, Hubert
dc.contributor.authorDevulder, Wouter
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorAfanas'ev, Valeri
dc.contributor.authorDelhougne, Romain
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorRavsher, Taras
dc.contributor.imecauthorGarbin, Daniele
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorDonadio, Gabriele Luca
dc.contributor.imecauthorKundu, Shreya
dc.contributor.imecauthorHody, Hubert
dc.contributor.imecauthorDevulder, Wouter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecRavsher, Taras::0000-0001-7862-5973
dc.contributor.orcidimecGarbin, Daniele::0000-0002-5884-1043
dc.contributor.orcidimecFantini, Andrea::0000-0002-3220-8856
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecKundu, Shreya::0000-0001-8052-7774
dc.contributor.orcidimecDevulder, Wouter::0000-0002-5156-0177
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecHody, Hubert::0009-0000-1407-8755
dc.contributor.orcidimecDegraeve, Robin::0000-0002-4609-5573
dc.contributor.orcidimecDelhougne, Romain::0009-0009-0129-709X
dc.contributor.orcidimecDonadio, Gabriele Luca::0000-0003-1435-3897
dc.date.accessioned2023-11-27T09:38:12Z
dc.date.available2023-02-04T03:19:31Z
dc.date.available2023-11-27T09:38:12Z
dc.date.embargo2023-07-06
dc.date.issued2023
dc.description.wosFundingTextThis work was carried out in the framework of the imec Core CMOS - Active Memory Program. T.R. acknowledges support by Research Foundation-Flanders (FWO) for providing funding via the strategic basic research Ph.D. fellowship (grant no. 1SD4721).
dc.identifier.doi10.1002/pssr.202200417
dc.identifier.issn1862-6254
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41060
dc.publisherWILEY-V C H VERLAG GMBH
dc.source.beginpageArt. 2200417
dc.source.endpagena
dc.source.issue8
dc.source.journalPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
dc.source.numberofpages9
dc.source.volume17
dc.title

Polarity-Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition

dc.typeJournal article
dspace.entity.typePublication
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