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Influence of silicon nitride passivation on DC and behaviour of InP HEMTs

Date

2002
Proceedings Paper
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dc.contributor.authorVandersmissen, Raf
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-14T23:42:21Z
dc.date.available2021-10-14T23:42:21Z
dc.date.embargo9999-12-31
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6972
dc.source.beginpage172
dc.source.conference10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Appications - EDMOCMOVPE
dc.source.conferencedate18/11/2002
dc.source.conferencelocationManchester UK
dc.source.endpage176
dc.title

Influence of silicon nitride passivation on DC and behaviour of InP HEMTs

dc.typeProceedings paper
dspace.entity.typePublication
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