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Electrical characterization of leaky charge-trapping high-k MOS devices using pulsed Q-V
Publication:
Electrical characterization of leaky charge-trapping high-k MOS devices using pulsed Q-V
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Date
2007-05
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Martens, Koen
;
Rosmeulen, Maarten
;
Kaczer, Ben
;
Groeseneken, Guido
;
Maes, Herman
Journal
IEEE Electron Device Letters
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1798
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Acq. date: 2025-12-16
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Metrics
Views
1798
since deposited on 2021-10-16
1
last month
Acq. date: 2025-12-16
Citations