Publication:
An adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT technology on 300 mm Si for RF applications
| dc.contributor.author | Kumar, Annie | |
| dc.contributor.author | Yadav, Sachin | |
| dc.contributor.author | Vais, Abhitosh | |
| dc.contributor.author | Boccardi, Guillaume | |
| dc.contributor.author | Mols, Yves | |
| dc.contributor.author | Alcotte, Reynald | |
| dc.contributor.author | Parvais, Bertrand | |
| dc.contributor.author | Kunert, Bernardette | |
| dc.contributor.author | Collaert, Nadine | |
| dc.contributor.imecauthor | Kumar, Annie | |
| dc.contributor.imecauthor | Yadav, Sachin | |
| dc.contributor.imecauthor | Vais, Abhitosh | |
| dc.contributor.imecauthor | Boccardi, Guillaume | |
| dc.contributor.imecauthor | Mols, Yves | |
| dc.contributor.imecauthor | Alcotte, Reynald | |
| dc.contributor.imecauthor | Parvais, Bertrand | |
| dc.contributor.imecauthor | Kunert, Bernardette | |
| dc.contributor.imecauthor | Collaert, Nadine | |
| dc.contributor.orcidimec | Kumar, Annie::0000-0002-1668-6188 | |
| dc.contributor.orcidimec | Yadav, Sachin::0000-0003-4530-2603 | |
| dc.contributor.orcidimec | Vais, Abhitosh::0000-0002-0317-7720 | |
| dc.contributor.orcidimec | Boccardi, Guillaume::0000-0003-3226-4572 | |
| dc.contributor.orcidimec | Mols, Yves::0000-0002-7072-0113 | |
| dc.contributor.orcidimec | Alcotte, Reynald::0009-0001-6529-0948 | |
| dc.contributor.orcidimec | Parvais, Bertrand::0000-0003-0769-7069 | |
| dc.contributor.orcidimec | Kunert, Bernardette::0000-0002-8986-4109 | |
| dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
| dc.date.accessioned | 2025-06-05T09:11:24Z | |
| dc.date.available | 2024-09-17T17:59:30Z | |
| dc.date.available | 2025-06-05T09:11:24Z | |
| dc.date.issued | 2024 | |
| dc.identifier.doi | 10.1109/IMS40175.2024.10600299 | |
| dc.identifier.eisbn | 979-8-3503-7504-6 | |
| dc.identifier.isbn | 979-8-3503-7505-3 | |
| dc.identifier.issn | 0149-645X | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/44497 | |
| dc.publisher | IEEE | |
| dc.source.beginpage | 940 | |
| dc.source.conference | IEEE/MTT-S International Microwave Symposium (IMS) | |
| dc.source.conferencedate | JUN 16-21, 2024 | |
| dc.source.conferencelocation | Washington | |
| dc.source.endpage | 943 | |
| dc.source.journal | N/A | |
| dc.source.numberofpages | 4 | |
| dc.title | An adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT technology on 300 mm Si for RF applications | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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