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Quantum well band calculations and their impact on device isolation and work function requirements for SiGe and III/V strained heterostructure FinFETs

Date

2013
Proceedings Paper
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dc.contributor.authorEneman, Geert
dc.contributor.authorBrunco, David
dc.contributor.authorRoussel, Philippe
dc.contributor.authorHellings, Geert
dc.contributor.authorKubicek, Stefan
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-21T07:29:18Z
dc.date.available2021-10-21T07:29:18Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22310
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6576692
dc.source.beginpageT92
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate11/06/2013
dc.source.conferencelocationKyoto Japan
dc.source.endpageT93
dc.title

Quantum well band calculations and their impact on device isolation and work function requirements for SiGe and III/V strained heterostructure FinFETs

dc.typeProceedings paper
dspace.entity.typePublication
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