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New mechanisms for ozone-based ALD growth of high-k dielectrics via nitrogen-oxygen species

Date

2010
Proceedings Paper
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dc.contributor.authorJung, Sung-Hoon
dc.contributor.authorRaisanen, Petri
dc.contributor.authorGivens, Michael
dc.contributor.authorShero, Eric
dc.contributor.authorDelabie, Annelies
dc.contributor.authorSwerts, Johan
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorMaes, Jan Willem
dc.contributor.imecauthorGivens, Michael
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-18T17:25:41Z
dc.date.available2021-10-18T17:25:41Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17329
dc.source.beginpage91
dc.source.conferenceAtomic Layer Deposition Applications 6
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
dc.source.endpage99
dc.title

New mechanisms for ozone-based ALD growth of high-k dielectrics via nitrogen-oxygen species

dc.typeProceedings paper
dspace.entity.typePublication
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