Effects of boron and germanium base profiles on SiGe and SiGe:C BJT characteristics

dc.contributor.author	Sadovnikov, A.
dc.contributor.author	Printy, C.
dc.contributor.author	Budri, T.
dc.contributor.author	Loo, Roger
dc.contributor.author	Meunier-Beillard, Philippe
dc.contributor.author	El-Diwany, M.
dc.contributor.imecauthor	Loo, Roger
dc.contributor.orcidimec	Loo, Roger::0000-0003-3513-6058
dc.date.accessioned	2021-10-14T23:00:45Z
dc.date.available	2021-10-14T23:00:45Z
dc.date.embargo	9999-12-31
dc.date.issued	2002
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/6783
dc.source.beginpage	611
dc.source.conference	ESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate	24/09/2002
dc.source.conferencelocation	Firenze Italy
dc.source.endpage	614
dc.title	Effects of boron and germanium base profiles on SiGe and SiGe:C BJT characteristics
dc.type	Proceedings paper
dspace.entity.type	Publication
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