Publication:

Impact of the channel thickness on the performance of the ultrathin InGaAs channel MOSFET devices

Date

2013
Proceedings Paper
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dc.contributor.authorAlian, AliReza
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorMols, Yves
dc.contributor.authorCantoro, Mirco
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-21T06:42:18Z
dc.date.available2021-10-21T06:42:18Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21964
dc.source.beginpage437
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate9/12/2013
dc.source.conferencelocationWashington, DC USA
dc.source.endpage440
dc.title

Impact of the channel thickness on the performance of the ultrathin InGaAs channel MOSFET devices

dc.typeProceedings paper
dspace.entity.typePublication
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