Publication:

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

Date

2020
Proceedings Paper
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dc.contributor.authorFirat, Meric
dc.contributor.authorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.authorRecaman Payo, Maria
dc.contributor.authorDuerinckx, Filip
dc.contributor.authorSharma, Rajiv
dc.contributor.authorPoortmans, Jef
dc.contributor.imecauthorFirat, Meric
dc.contributor.imecauthorRadhakrishnan, Hariharsudan Sivaramakrishnan
dc.contributor.imecauthorDuerinckx, Filip
dc.contributor.imecauthorSharma, Rajiv
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.orcidimecFirat, Meric::0000-0002-6509-9668
dc.contributor.orcidimecDuerinckx, Filip::0000-0003-2570-7371
dc.contributor.orcidimecSharma, Rajiv::0000-0002-6724-1437
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.contributor.orcidimecSivaramakrishnan Radhakrishnan, Hariharsudan::0000-0003-1963-273X
dc.date.accessioned2022-01-13T10:50:19Z
dc.date.available2021-11-02T16:01:13Z
dc.date.available2022-01-13T10:50:19Z
dc.date.issued2020
dc.identifier.eisbn978-1-7281-6115-0
dc.identifier.issn0160-8371
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37881
dc.publisherIEEE
dc.source.beginpage160
dc.source.conference47th IEEE Photovoltaic Specialists Conference (PVSC)
dc.source.conferencedateJUN 15-AUG 21, 2020
dc.source.conferencelocationCalgary, Canada
dc.source.endpage163
dc.source.journalna
dc.source.numberofpages4
dc.title

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

dc.typeProceedings paper
dspace.entity.typePublication
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