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On the recoverable and permanent components of hot carrier and NBTI in Si pMOSFETs and their implications in Si0.45Ge0.55 pMOSFETs

Date

2011
Proceedings Paper
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorEneman, Geert
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCho, Moon Ju
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2021-10-19T13:36:04Z
dc.date.available2021-10-19T13:36:04Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18925
dc.source.beginpage624
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate10/04/2011
dc.source.conferencelocationMonterey, CA USA
dc.source.endpage629
dc.title

On the recoverable and permanent components of hot carrier and NBTI in Si pMOSFETs and their implications in Si0.45Ge0.55 pMOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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