Publication:

Switching of a magnetic tunnel junction by voltage-controlled magnetic anisotropy

Date

2025-JAN 21
Journal article
https://doi.org/10.1103/PhysRevApplied.23.014040
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dc.contributor.authorFavaro, D.
dc.contributor.authorKim, W.
dc.contributor.authorRanjbar, S.
dc.contributor.authorMonteiro, M. Gama
dc.contributor.authorCarpenter, R.
dc.contributor.authorRao, S.
dc.contributor.authorVan Beek, S.
dc.contributor.authorLabbate, L.
dc.contributor.authorVan Houdt, J.
dc.contributor.authorTemst, K.
dc.contributor.authorCouet, S.
dc.contributor.imecauthorFavaro, D.
dc.contributor.imecauthorKim, W.
dc.contributor.imecauthorRanjbar, S.
dc.contributor.imecauthorMonteiro, M. Gama
dc.contributor.imecauthorCarpenter, R.
dc.contributor.imecauthorRao, S.
dc.contributor.imecauthorVan Beek, S.
dc.contributor.imecauthorLabbate, L.
dc.contributor.imecauthorVan Houdt, J.
dc.contributor.imecauthorTemst, K.
dc.contributor.imecauthorCouet, S.
dc.date.accessioned2025-02-11T21:41:45Z
dc.date.available2025-02-11T21:41:45Z
dc.date.issued2025-JAN 21
dc.description.wosFundingTextThis work was supported by KU Leuven Grants No. C14/18/074 and No. C14/24/110, by the FWO-FNRS WEAVE, and by the imec industrial affiliation program on magnetic memory. The authors declare no conflicts of interest.
dc.identifier.doi10.1103/PhysRevApplied.23.014040
dc.identifier.issn2331-7019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45198
dc.publisherAMER PHYSICAL SOC
dc.source.issue1
dc.source.journalPHYSICAL REVIEW APPLIED
dc.source.numberofpages9
dc.source.volume23
dc.subject.keywordsLAYERS
dc.title

Switching of a magnetic tunnel junction by voltage-controlled magnetic anisotropy

dc.typeJournal article
dspace.entity.typePublication
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