Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth

dc.contributor.author	Vandervorst, Wilfried
dc.contributor.author	Janssens, Tom
dc.contributor.author	Brijs, Bert
dc.contributor.author	Delhougne, Romain
dc.contributor.author	Loo, Roger
dc.contributor.author	Caymax, Matty
dc.contributor.author	Pawlak, Bartek
dc.contributor.author	Posselt, Matthias
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.contributor.imecauthor	Delhougne, Romain
dc.contributor.imecauthor	Loo, Roger
dc.contributor.imecauthor	Caymax, Matty
dc.contributor.imecauthor	Pawlak, Bartek
dc.contributor.orcidimec	Loo, Roger::0000-0003-3513-6058
dc.date.accessioned	2021-10-16T06:34:05Z
dc.date.available	2021-10-16T06:34:05Z
dc.date.issued	2005
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/11465
dc.source.beginpage	81915
dc.source.issue	8
dc.source.journal	Applied Physics Letters
dc.source.volume	86
dc.title	Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth
dc.type	Journal article
dspace.entity.type	Publication
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