Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

dc.contributor.author	Goux, Ludovic
dc.contributor.author	Opsomer, Karl
dc.contributor.author	Degraeve, Robin
dc.contributor.author	Muller, Robert
dc.contributor.author	Detavernier, C
dc.contributor.author	Wouters, Dirk
dc.contributor.author	Jurczak, Gosia
dc.contributor.author	Altimime, Laith
dc.contributor.author	Kittl, Jorge
dc.contributor.imecauthor	Goux, Ludovic
dc.contributor.imecauthor	Opsomer, Karl
dc.contributor.imecauthor	Degraeve, Robin
dc.contributor.imecauthor	Jurczak, Gosia
dc.contributor.orcidimec	Goux, Ludovic::0000-0002-1276-2278
dc.date.accessioned	2021-10-19T13:53:45Z
dc.date.available	2021-10-19T13:53:45Z
dc.date.issued	2011
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/18991
dc.identifier.url	http://link.aip.org/link/?APL/99/053502
dc.source.beginpage	53502
dc.source.issue	5
dc.source.journal	Applied Physics Letters
dc.source.volume	99
dc.title	Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
dc.type	Journal article
dspace.entity.type	Publication
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