Publication:

Solutions To Improve HBM ESD Robustness of GaN RF HEMTs

Date

2023
Proceedings Paper
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dc.contributor.authorSandupatla, Abhinay
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorMane, Nikhil
dc.contributor.authorParvais, Bertrand
dc.contributor.authorYu, Hao
dc.contributor.authorPradhan, Nilam
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorSandupatla, Abhinay
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorMane, Nikhil
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecChen, Shih-Hung::0000-0002-6481-2951
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2024-05-06T14:38:45Z
dc.date.available2023-11-30T16:47:45Z
dc.date.available2024-05-06T14:38:45Z
dc.date.issued2023
dc.identifier.eisbn978-1-58537-347-5
dc.identifier.issn0739-5159
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43203
dc.publisherIEEE
dc.source.conference45th Annual Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium
dc.source.conferencedateOCT 02-04, 2023
dc.source.conferencelocationRiverside
dc.source.journalN/A
dc.source.numberofpages6
dc.subject.keywordsELECTRON-MOBILITY
dc.title

Solutions To Improve HBM ESD Robustness of GaN RF HEMTs

dc.typeProceedings paper
dspace.entity.typePublication
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