Publication:

DLTS Study of Electrically Active Defects in semi-vertical GaN-on-Si FETs

Date

2020
Proceedings Paper
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dc.contributor.authorDrobnŭ, Jakub
dc.contributor.authorMarek, Juraj
dc.contributor.authorKoza, A.
dc.contributor.authorVadovski, J.
dc.contributor.authorGeens, Karen
dc.contributor.authorBorga, Matteo
dc.contributor.authorLiang, Hu
dc.contributor.authorYou, Shuzhen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorStuchlíková, Lubica
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-28T21:25:51Z
dc.date.available2021-10-28T21:25:51Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35072
dc.source.beginpage25
dc.source.conferenceSolid State Surfaces and Interfaces 2020 (SSSI)
dc.source.conferencedate23/11/2020
dc.source.conferencelocationSmolenice Slovakia
dc.source.endpage26
dc.title

DLTS Study of Electrically Active Defects in semi-vertical GaN-on-Si FETs

dc.typeProceedings paper
dspace.entity.typePublication
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