Publication:
Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate Bias
| dc.contributor.author | Huang, Peng | |
| dc.contributor.author | Smith, Matthew D. | |
| dc.contributor.author | Uren, Michael J. | |
| dc.contributor.author | Chen, Zequan | |
| dc.contributor.author | Bakeroot, Benoit | |
| dc.contributor.author | Vohra, Anurag | |
| dc.contributor.author | Decoutere, Stefaan | |
| dc.contributor.author | Kuball, Martin | |
| dc.contributor.imecauthor | Bakeroot, Benoit | |
| dc.contributor.imecauthor | Vohra, Anurag | |
| dc.contributor.imecauthor | Decoutere, Stefaan | |
| dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
| dc.contributor.orcidimec | Vohra, Anurag::0000-0002-2831-0719 | |
| dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
| dc.date.accessioned | 2025-06-13T04:52:40Z | |
| dc.date.available | 2025-06-13T04:52:40Z | |
| dc.date.issued | 2025-JUN 2 | |
| dc.description.wosFundingText | This work was supported in part by the Engineering and Physical Sciences Research Council (EPSRC) under Grant EP/R029393/1 and in part by the U.K. Research and Innovation (UKRI) Innovation and Knowledge Centre Transforming Net Zero with Ultrawide Bandgap Semiconductor Device Technology (REWIRE) under Grant EP/Z531091/1. | |
| dc.identifier.doi | 10.1109/TED.2025.3571004 | |
| dc.identifier.issn | 0018-9383 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45797 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
| dc.source.numberofpages | 6 | |
| dc.title | Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate Bias | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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