Publication:

P+/N junction formation in thin strain relaxed buffer strained silicon substrates: the effect of the junction anneal

Date

2005
Proceedings Paper
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dc.contributor.authorEneman, Geert
dc.contributor.authorSimoen, Eddy
dc.contributor.authorDelhougne, Romain
dc.contributor.authorVerheyen, Peter
dc.contributor.authorSimons, Veerle
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorSimons, Veerle
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSimons, Veerle::0000-0001-5714-955X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T01:30:17Z
dc.date.available2021-10-16T01:30:17Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10430
dc.source.beginpage338
dc.source.conferenceULSI Process Integration IV
dc.source.conferencedate16/05/2005
dc.source.conferencelocationQuebec Canada
dc.source.endpage348
dc.title

P+/N junction formation in thin strain relaxed buffer strained silicon substrates: the effect of the junction anneal

dc.typeProceedings paper
dspace.entity.typePublication
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