Publication:

Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs

Date

2015
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorSpessot, Alessio
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorCho, Moon Ju
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorFazan, Pierre
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorFazan, Pierre
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-22T23:05:43Z
dc.date.available2021-10-22T23:05:43Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25935
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7165890
dc.source.beginpage1
dc.source.conferenceInternational Conference on IC Design and Technology - ICICDT
dc.source.conferencedate1/06/2015
dc.source.conferencelocationLeuven Belgium
dc.source.endpage4
dc.title

Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
31563.pdf
Size:
3.54 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions