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Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs
Publication:
Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs
Date
2011
Journal article
https://doi.org/10.1063/1.3660697
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Interface_trap_density_metrology_from_sub-threshold_transport_in_highly_scaled_undoped_Si_n-FinFETs
1.27 MB
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Paul, Abhijeet
;
Tettamanzi, Giuseppe C.
;
Lee, Sunhee
;
Mehrotra, Saumitra
;
Collaert, Nadine
;
Biesemans, Serge
;
Rogge, Sven
;
Klimeck, Gerard
Journal
Journal of Applied Physics
Abstract
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192
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Acq. date: 2025-10-23
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1928
since deposited on 2021-10-19
Acq. date: 2025-10-23
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Metrics
Downloads
192
since deposited on 2021-10-19
Acq. date: 2025-10-23
Views
1928
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations