Publication:

High hole mobility SGOI substrates obtained by the Ge condensation technique

Date

2008
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorSouriau, Laurent
dc.contributor.authorNguyen, Tuan
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorLoo, Roger
dc.contributor.authorTerzieva, Valentina
dc.contributor.authorCaymax, Matty
dc.contributor.authorCristoloveanu, Sorin
dc.contributor.authorMeuris, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorTerzieva, Valentina
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T10:57:00Z
dc.date.available2021-10-17T10:57:00Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14503
dc.source.beginpage79
dc.source.conferenceSiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage89
dc.title

High hole mobility SGOI substrates obtained by the Ge condensation technique

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
16612.pdf
Size:
372.41 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions