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Accurate determination of channel length, series resistance and junction doping profile for MOSFET optimisation in deep submicron technologies

Date

1996
Proceedings Paper
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dc.contributor.authorBiesemans, Serge
dc.contributor.authorHendriks, Marton
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-09-29T14:17:20Z
dc.date.available2021-09-29T14:17:20Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1091
dc.source.beginpage166
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate11/06/1996
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage167
dc.title

Accurate determination of channel length, series resistance and junction doping profile for MOSFET optimisation in deep submicron technologies

dc.typeProceedings paper
dspace.entity.typePublication
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