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Fundamental study of the apparent voltage-dependence of NBTI kinetics by constant electric field stress in Si and SiGe devices

Date

2016
Proceedings Paper
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dc.contributor.authorMukhopadhyay, Subhadeep
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorRoussel, Philippe
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLinten, Dimitri
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-23T13:05:38Z
dc.date.available2021-10-23T13:05:38Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27051
dc.source.beginpage5A.3
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate16/04/2016
dc.source.conferencelocationPasadena, CA USA
dc.title

Fundamental study of the apparent voltage-dependence of NBTI kinetics by constant electric field stress in Si and SiGe devices

dc.typeProceedings paper
dspace.entity.typePublication
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