Modelling of transconductance-to-current ratio (g(m)ID) analysis on double-gate SOI MOSFETs

dc.contributor.author	Krishnasamy, Rajendran
dc.contributor.author	Samudra, G. S.
dc.date.accessioned	2021-10-14T13:37:30Z
dc.date.available	2021-10-14T13:37:30Z
dc.date.embargo	9999-12-31
dc.date.issued	2000
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/4683
dc.source.beginpage	139
dc.source.endpage	144
dc.source.issue	2
dc.source.journal	Semiconductor Science and Technology
dc.source.volume	15
dc.title	Modelling of transconductance-to-current ratio (g(m)ID) analysis on double-gate SOI MOSFETs
dc.type	Journal article
dspace.entity.type	Publication
Files	Original bundle Name: 4680.pdf Size: 159.6 KB Format: Adobe Portable Document Format Download
Publication available in collections:	Articles

Date