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Spin-based magnetic random-access memory for high-performance computing

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dc.contributor.authorCai, Kaiming
dc.contributor.authorJin, Tianli
dc.contributor.authorLew, Wen Siang
dc.contributor.imecauthorCai, Kaiming
dc.contributor.orcidimecCai, Kaiming::0000-0002-1160-864X
dc.date.accessioned2024-08-12T08:29:02Z
dc.date.available2023-12-25T17:40:00Z
dc.date.available2024-08-12T08:29:02Z
dc.date.embargo2023-10-25
dc.date.issued2024
dc.description.wosFundingTextThis work was supported by the Inter university Microelectronics Centre (IMEC)'s Industrial Affiliation Program on MRAM devices. K.C. acknowledges the support from the ECSEL Joint Undertaking Program (876925 project ANDANTE). K.C. also acknowledges support from the National Natural Science Foundation of China and the startup grant of Huazhong University of Science and Technology (3034012113). T.J. and W.S.L. acknowledge support from RIE2020 ASTARAMEIAF-ICP (I1801E0030).
dc.identifier.doi10.1093/nsr/nwad272
dc.identifier.issn2095-5138
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43299
dc.publisherOXFORD UNIV PRESS
dc.source.beginpagenwad272
dc.source.endpageN/A
dc.source.issue3
dc.source.journalNATIONAL SCIENCE REVIEW
dc.source.numberofpages3
dc.source.volume11
dc.title

Spin-based magnetic random-access memory for high-performance computing

dc.typeEditorial material
dspace.entity.typePublication
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