Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast

dc.contributor.author	van Dorp, Dennis
dc.contributor.author	Arnauts, Sophia
dc.contributor.author	Laitinnen, Mikko
dc.contributor.author	Sajavaara, Timo
dc.contributor.author	Meersschaut, Johan
dc.contributor.author	Conard, Thierry
dc.contributor.author	Kelly, John
dc.contributor.imecauthor	van Dorp, Dennis
dc.contributor.imecauthor	Arnauts, Sophia
dc.contributor.imecauthor	Meersschaut, Johan
dc.contributor.imecauthor	Conard, Thierry
dc.contributor.orcidimec	van Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimec	Meersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimec	Conard, Thierry::0000-0002-4298-5851
dc.date.accessioned	2021-10-27T20:40:55Z
dc.date.available	2021-10-27T20:40:55Z
dc.date.issued	2019
dc.identifier.issn	0169-4332
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/34211
dc.identifier.url	https://www.sciencedirect.com/science/article/pii/S0169433218326060
dc.source.beginpage	596
dc.source.endpage	606
dc.source.journal	Applied Surface Science
dc.source.volume	465
dc.title	Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast
dc.type	Journal article
dspace.entity.type	Publication
Files
Publication available in collections:	Articles

Date