Publication:

Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology

Date

2013
Journal article
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dc.contributor.authorVeloso, Anabela
dc.contributor.authorChew, Soon Aik
dc.contributor.authorHiguchi, Yuichi
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSchram, Tom
dc.contributor.authorWitters, Thomas
dc.contributor.authorVan Ammel, Annemie
dc.contributor.authorDekkers, Harold
dc.contributor.authorTielens, Hilde
dc.contributor.authorDevriendt, Katia
dc.contributor.authorHeylen, Nancy
dc.contributor.authorSebaai, Farid
dc.contributor.authorBrus, Stephan
dc.contributor.authorFavia, Paola
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorPhatak, Anup
dc.contributor.authorChen, M. S.
dc.contributor.authorLu, X.
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorVan Ammel, Annemie
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorTielens, Hilde
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-21T13:56:43Z
dc.date.available2021-10-21T13:56:43Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23315
dc.identifier.urlhttp://jjap.jsap.jp/link?JJAP/52/04CA02/
dc.source.beginpage04CA02
dc.source.issue4
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume52
dc.title

Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology

dc.typeJournal article
dspace.entity.typePublication
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