Publication:

On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices

Date

2021
Proceedings Paper
https://doi.org/10.1109/IRPS46558.2021.9405139
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dc.contributor.authorPutcha, Vamsi
dc.contributor.authorCheng, Liang
dc.contributor.authorAlian, AliReza
dc.contributor.authorZhao, Ming
dc.contributor.authorLu, H.
dc.contributor.authorParvais, Bertrand
dc.contributor.authorWaldron, Niamh
dc.contributor.authorLinten, Dimitri
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecParvais, B.::0000-0003-0769-7069
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2022-06-28T08:13:48Z
dc.date.available2021-11-02T15:58:24Z
dc.date.available2022-06-28T08:13:48Z
dc.date.issued2021
dc.identifier.doi10.1109/IRPS46558.2021.9405139
dc.identifier.eisbn978-1-7281-6893-7
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37684
dc.publisherIEEE
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateMAR 21-24, 2021
dc.source.conferencelocationna
dc.source.journalna
dc.source.numberofpages8
dc.subject.keywordsALGAN/GAN HEMTS
dc.title

On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices

dc.typeProceedings paper
dspace.entity.typePublication
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