Publication:

Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance

Date

 
dc.contributor.authorO'Connor, R.
dc.contributor.authorHughes, G.
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-16T03:43:36Z
dc.date.available2021-10-16T03:43:36Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10946
dc.source.beginpage869
dc.source.endpage874
dc.source.issue5_6
dc.source.journalMicroelectronics Reliability
dc.source.volume45
dc.title

Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections: