Publication:

Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric

Date

2021
Journal article
https://doi.org/10.1063/5.0029833
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecSimoen, E.::0000-0002-5218-4046
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecVan Houdt, Jan::1234-1234-1234-1235
dc.date.accessioned2022-02-24T09:23:34Z
dc.date.available2022-02-24T09:23:34Z
dc.date.issued2021
dc.identifier.doi10.1063/5.0029833
dc.identifier.issn2158-3226
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39090
dc.publisherAIP Publishing
dc.source.beginpage015219
dc.source.issue1
dc.source.journalAIP ADVANCES
dc.source.numberofpages4
dc.source.volume11
dc.subject.keywordsBORDER TRAPS
dc.subject.keywordsRETENTION
dc.title

Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric

dc.typeJournal article
dspace.entity.typePublication
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