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Performance Enhancement of THz Detector Based on Trantenna with Shallow Trench Isolation in 28-nm CMOS Technology

 
dc.contributor.authorBin Song, Yoo
dc.contributor.authorRyu, Min Woo
dc.contributor.authorJang E-san
dc.contributor.authorKim, Kyung Rok
dc.date.accessioned2026-04-30T13:56:43Z
dc.date.available2026-04-30T13:56:43Z
dc.date.createdwos2025-11-04
dc.date.issued2025
dc.description.abstractWe report a high-performance plasmonic terahertz (THz) detector based on a monolithic transistor-antenna (Trantenna) structure by using the 28-nm CMOS foundry technology. By designing an ultimate asymmetric field-effect transistor (FET) on a confined channel structure with shallow trench isolation (STI) technology, enhanced channel charge asymmetry between the source and drain has been obtained compared to the non-confined channel structure with limitations of asymmetric boundary condition intensification. In addition, we experimentally demonstrate a 2.25-fold performance enhancement over the non-confined channel plasmonic THz detector at 0.1 THz.
dc.description.wosFundingTextThis work was supported in part by the National Re-search Foundation of Korea (NRF) funded by the Korea government (MSIT) under Grant RS-2022-NR072363 and RS-2024-00411374; and in part by Ulsan National Institute of Science and Technology under Grant 1.250005.01; the chip fabrication and EDA tool were supported by the IC Design Education Center (IDEC) , Korea.
dc.identifier.doi10.5573/jsts.2025.25.5.496
dc.identifier.issn1598-1657
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59256
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEK PUBLICATION CENTER
dc.source.beginpage496
dc.source.endpage501
dc.source.issue5
dc.source.journalJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
dc.source.numberofpages6
dc.source.volume25
dc.subject.keywordsTERAHERTZ RADIATION
dc.subject.keywordsANTENNA
dc.title

Performance Enhancement of THz Detector Based on Trantenna with Shallow Trench Isolation in 28-nm CMOS Technology

dc.typeJournal article
dspace.entity.typePublication
imec.internal.crawledAt2026-04-07
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-04-07
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