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AlGaN/GaN HEMT grown on 150 mm Silicon(111) Substrates

Date

2007
Proceedings Paper
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dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorDerluyn, Joff
dc.contributor.authorSijmus, Bram
dc.contributor.authorFavia, Paola
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.accessioned2021-10-16T15:16:02Z
dc.date.available2021-10-16T15:16:02Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11849
dc.source.conference12th European Workshop on Metalorganic Vapour Phase Epitaxy - EWMOVPE XII
dc.source.conferencedate3/06/2007
dc.source.conferencelocationBratislava Slovakia
dc.title

AlGaN/GaN HEMT grown on 150 mm Silicon(111) Substrates

dc.typeProceedings paper
dspace.entity.typePublication
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