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Conference contributions
GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices
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GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices
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Date
2005
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hoffmann, Thomas Y.
;
Doornbos, Gerben
;
Ferain, Isabelle
;
Collaert, Nadine
;
Zimmerman, Paul
;
Goodwin, Michael
;
Rooyackers, Rita
;
Kottantharayil, Anil
;
Yim, Yong Sik
;
Dixit, Abhisek
;
De Meyer, Kristin
;
Jurczak, Gosia
;
Biesemans, Serge
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2069
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Acq. date: 2026-02-25
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Statistics
Views
2069
since deposited on 2021-10-16
1
last month
Acq. date: 2026-02-25
Citations