Publication:

GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices

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2076 since deposited on 2021-10-16
3last month
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Acq. date: 2026-08-06

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Views

2076 since deposited on 2021-10-16
3last month
2last week
Acq. date: 2026-08-06

Citations