Publication:
GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices
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2067 since deposited on 2021-10-16
Acq. date: 2025-12-08
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Views
2067 since deposited on 2021-10-16
Acq. date: 2025-12-08
Citations